PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
NE41137 |
N-Channel GaAs Dual Gate MES FET N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories NEC[NEC]
|
3SK231 3SK231U1C 3SK231U1D |
N-Channel Silicon Dual-Gate MOSFET(应用于RF放大器的N沟道双门MOSFET) 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R
|
NEC Corp.
|
KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
IN74AC20N IN74AC20 IN74AC20D |
DUAL 4-INPUT NAND GATE High-Speed Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
IN74HC20AN IN74HC20A IN74HC20AD |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
KK4002BD KK4002B KK4002BN |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|